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| MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 0.085 0.088 Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 35N30 40N30 35N30 40N30 Maximum Ratings 300 300 20 30 35 40 140 160 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 100 TJ = 25C TJ = 125C 200 1 0.10 0.085 0.088 V V nA A mA Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l IXTH35N30 IXTH40N30 IXTM40N30 Pulse test, t 300 s, duty cycle d 2 % Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l l l l l l l l 91535E(5/96) 1-4 IXTH 35N30 IXTH 40N30 IXTM 40N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 25 4600 S pF pF pF 30 90 100 90 220 50 105 0.42 0.25 ns ns ns ns nC nC nC K/W K/W TO-247 AD (IXTH) Outline gfs Ciss Coss Crss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test 1 2 3 VGS = 0 V, VDS = 25 V, f = 1 MHz 650 240 24 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 40 75 40 190 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 85 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35N30 40N30 35N30 40N30 35 40 140 160 1.5 400 A A A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 35N30 IXTH 40N30 IXTM 40N30 Fig. 1 Output Characteristics 80 70 TJ = 25C VGS = 10V 8V 7V Fig. 2 Input Admittance 80 70 60 60 ID - Amperes ID - Amperes 50 6V 50 40 30 20 10 0 TJ = 25C 40 30 20 10 0 5V 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 2.0 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.8 RDS(on) - Normalized RDS(on) - Normalized 1.6 1.4 VGS = 10V 2.00 1.75 1.50 1.25 1.00 0.75 ID = 20A 1.2 VGS = 15V 1.0 0.8 0.6 0 20 40 60 80 100 120 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 50 40 40N30 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 50 75 100 125 150 ID - Amperes 1.0 0.9 0.8 0.7 0.6 30 20 10 0 -50 35N30 -25 0 25 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 35N30 IXTH 40N30 IXTM 40N30 Fig.7 Gate Charge Characteristic Curve 10 VDS = 150V Fig.8 Forward Bias Safe Operating Area 10s 100 Limited by RDS(on) 8 ID = 21A IG = 10mA 6 4 2 0 0 25 50 75 100 125 150 175 200 ID - Amperes 100s VGE - Volts 10 1ms 10ms 100ms 1 1 10 100 300 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 Coss Crss f = 1 MHz VDS = 25V Ciss Fig.10 Source Current vs. Source to Drain Voltage 80 70 60 Capacitance - pF ID - Amperes 50 40 30 TJ = 25C TJ = 125C 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Vds - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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